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Overcoming Ni 3+ ‐Induced Non‐Radiative Recombination at Perovskite‐Nickel Oxide Interfaces to Boost Voltages in Perovskite Solar Cells
Author(s) -
Guo Yaxiong,
Ma Junjie,
Wang Haibing,
Ye Feihong,
Xiong Liangbin,
Lei Hongwei,
Tan Zuojun
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202100920
Subject(s) - perovskite (structure) , non blocking i/o , materials science , nickel oxide , perovskite solar cell , energy conversion efficiency , photovoltaics , optoelectronics , oxide , doping , chemical physics , chemical engineering , photovoltaic system , metallurgy , chemistry , catalysis , ecology , biochemistry , engineering , biology
Nickel oxide (NiO x ) is desirable hole selective material (HSMs) for perovskite photovoltaics because of the characteristic in stability and low cost. However, they deliver limited open‐circuit voltage ( V OC ) compared to some organic HSMs. As it is known, the performance of perovskite solar cells is predominantly limited by trap‐assisted non‐radiative recombination at the perovskite/hole‐selective layer interfaces. A typical lithium‐doping strategy leads to the valence‐band maximum shift and the electronic levels of NiO x can be tuned robustly to match perovskite active layer in perovskite solar cells. More critically, carrier dynamics studies demonstrate another critical PN4N interlayer strategy reduced interfacial density of defect sites and trap‐assisted recombination. These merits contribute coordinately to lower energy loss across the perovskite/NiO x interface and facilitate charge transport process through the relevant interface, yielding V OC values increase to 1.14 V and power conversion efficiencies over 20%.