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Impact of Different Intermediate Layers on the Morphology and Crystallinity of TiO 2 Grown on Carbon Nanotubes by Atomic Layer Deposition
Author(s) -
Wang Jiao,
Yin Zhigang,
Hermerschmidt Felix,
ListKratochvil Emil J. W.,
Pinicola
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202100759
Subject(s) - materials science , crystallinity , atomic layer deposition , nanocomposite , crystallization , chemical engineering , carbon nanotube , microstructure , thin film , nanotechnology , photocatalysis , coating , conformal coating , layer (electronics) , substrate (aquarium) , homogeneity (statistics) , composite material , catalysis , organic chemistry , chemistry , oceanography , geology , engineering , statistics , mathematics
Nanocomposites of TiO 2 and carbon nanotubes (CNTs) have been extensively studied in photocatalysis, sensing, and energy conversion and storage over the last decade. The unique properties of these nanocomposites are greatly dependent on the morphology, crystallinity, and homogeneity of the TiO 2 coating. However, a fine control of the film microstructure is still challenging due to limited understanding of early stages of the TiO 2 growth. The presence of an intermediate buffer layer can induce remarkable changes in the morphological and structural characteristics of the coatings. Here, TiO 2 films deposited by atomic layer deposition (ALD) on CNTs without and with different intermediate layers (Al 2 O 3 and ZnO) have been systematically investigated. Compared to bare CNTs, it is suggested that these two intermediate layers with higher surface energy can lead to a delay of the TiO 2 crystallization, ultimately resulting in the growth of conformal and crystalline TiO 2 films. This study demonstrates a strategy to tailor the microstructure and the properties of thin films via ALD by applying intermediate layers and provides information about the role of surface energy of the substrate in crystallization and growth behavior of ALD thin films.