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Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films
Author(s) -
Yin Qixun,
Wang Ming,
Xu Xiulan,
Yu Guanghua,
Chen Leng
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202100405
Subject(s) - superlattice , materials science , thin film , crystallization , phase change memory , sputter deposition , monolayer , thermal stability , sputtering , phase (matter) , optoelectronics , layer (electronics) , condensed matter physics , nanotechnology , chemical engineering , chemistry , physics , organic chemistry , engineering
A promising phase change materials based on a distinct nanoscale structure called superlattice is applied in lateral phase change memory (PCM) due to comprehensive performances. In this work, superlattice‐like structure of [GaSb( x )/Ge 2 Sb 2 Te 5 ( y )] n ( x = 6,9,12,18 nm; y = 12,18 nm; n = 3,6) thin films is proposed and alternatively deposited with GaSb and Ge 2 Sb 2 Te 5 (GST) layers by magnetron sputtering method. The experimental results show that [GaSb( x nm)/GST(12 nm)] 3 thin films possess higher crystallization temperature and less volume change than that of monolayer GST. Moreover, [GaSb( x )/GST(12)] 3 thin films show super‐hardness and super‐modulus effect. The hardness enhancement mechanism is discussed and the critical thickness of GST layer is calculated as ≈18.1 nm, thus the interfaces are coherent without dislocation threading in critical condition. Therefore, the higher thermal stability and increased hardness values reflect great potential in practical application of superlattice‐like [GaSb( x )/GST(12)] n thin films.