Premium
A Flexible Self‐Powered UV Photodetector and Optical UV Filter Based on β‐Bi 2 O 3 /SnO 2 Quantum Dots Schottky Heterojunction
Author(s) -
Praveen Shanigaram,
Veeralingam Sushmitha,
Badhulika Sushmee
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202100373
Subject(s) - materials science , responsivity , quantum dot , optoelectronics , photodetector , photodetection , nanofiber , heterojunction , specific detectivity , ultraviolet , nanorod , quantum efficiency , nanotechnology
Recently reported ultraviolet (UV) detectors majorly focus on exploration of photodetection properties like photon absorption and electron‐hole pair generation to improve the photoresponsivity. However, UV sensors also have a potential advantage of monitoring the excessive UV exposure on skin. In this work, bismuth oxide/SnO 2 quantum dots (QDs) vertical‐junction‐based self‐powered UV photodetector and optical UV filter are demonstrated. β‐Bi 2 O 3 nanofibers are synthesized via electrospinning technique and SnO 2 QDs are synthesized using a facile, single step hydrothermal process. Detailed morphological studies reveal the formation of 1D‐Bi 2 O 3 and 0D‐SnO 2 . The fabricated self‐powered Bi 2 O 2 /SnO 2 ‐based p–n heterojunction device exhibits a maximum responsivity of 62.5 µ A W −1 and specific detectivity (D*) of 4.5 × 109 Jones attributing to the high absorption coefficient of β‐Bi 2 O 2 nanofibers and SnO 2 QDs in the UV region. Further, the 1D β‐Bi 2 O 3 nanofibers and 0D SnO 2 QDs are coated onto disposable cloth substrate to fabricate the UV optical filter which exhibits an exceptional ultraviolet protection factor of 159 and the photodetector device demonstrates high stability and reproducibility even after 1000 bending cycles. The strategy outlined here paves the way for development of bifunctional, cost‐effective design and construction of wearable UV sensors and protective devices for advanced nano‐electronic applications.