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Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb 2 Se 3 /VO 2 Heterojunction
Author(s) -
Xin Yun,
Jiang Jinchun,
Lu Yangfan,
Liang Huawei,
Zeng YuJia,
Ye Zhizhen
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202100058
Subject(s) - responsivity , materials science , heterojunction , photodetector , optoelectronics , ultrashort pulse , substrate (aquarium) , sputter deposition , sapphire , broadband , pulsed laser deposition , sputtering , optics , laser , thin film , nanotechnology , physics , oceanography , geology
Abstract Sb 2 Se 3 /VO 2 heterojunction is successfully fabricated on a sapphire substrate using pulsed laser deposition (PLD) and magnetron sputtering. The device shows prominent self‐powered broadband photoresponse with ultrafast response speed at both rise and decay processes. The highest responsivity of the device is acquired under 520 nm wavelength light incidence. The optimized responsivity reaches 0.244 A W –1 and the response times are 200 and 360 µs at rise and decay, respectively. Sb 2 Se 3 /VO 2 heterojunction is promising for self‐powered broadband photodetectors.