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Thin Films: Area‐Selective Growth of HfS 2 Thin Films via Atomic Layer Deposition at Low Temperature (Adv. Mater. Interfaces 23/2020)
Author(s) -
Cao Yuanyuan,
Wähler Tobias,
Park Hyoungwon,
Will Johannes,
Prihoda Annemarie,
Moses Badlyan Narine,
Fromm Lukas,
Yokosawa Tadahiro,
Wang Bingzhe,
Guldi Dirk M.,
Görling Andreas,
Maultzsch Janina,
Unruh Tobias,
Spiecker Erdmann,
Halik Marcus,
Libuda Jörg,
Bachmann Julien
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202070130
Subject(s) - materials science , atomic layer deposition , thin film , monolayer , layer (electronics) , deposition (geology) , stoichiometry , sulfide , atmospheric temperature range , chemical engineering , optoelectronics , nanotechnology , analytical chemistry (journal) , metallurgy , chemistry , organic chemistry , paleontology , physics , sediment , meteorology , engineering , biology
The 2D semiconductor hafnium sulfide, HfS2, is deposited for the first time using atomic layer deposition in mild conditions and at low temperature (100 °C). The surface reactions are specific and allow for area‐selective deposition of high‐quality thin films on self‐assembled molecular monolayers. When properly protected from air, the material is pure, stoichiometric, and ordered on a short range as deposited. More details can be found in article number 2001493 by Julien Bachmann and co‐workers.