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Memristors: Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors (Adv. Mater. Interfaces 20/2020)
Author(s) -
Chan YaTing,
Fu Yi,
Yu Lu,
Wu FengYu,
Wang HoWei,
Lin TingHan,
Chan ShunHsiang,
Wu MingChung,
Wang JerChyi
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202070111
Subject(s) - memristor , materials science , neuromorphic engineering , graphene , nanotechnology , surface modification , oxide , computer science , artificial neural network , chemical engineering , electronic engineering , engineering , artificial intelligence , metallurgy
In article number 2000860 by Jer‐Chyi Wang and co‐workers, a cheap and mass‐productive compacted self‐assembly graphene with H 2 plasma surface modification is used as the bottom electrode of Gd x O y memristors to emulate the robust synapses in nervous systems and provide an opportunity for applications in future neuromorphic computing systems.

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