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Vertically Standing Graphene: Heater‐Free and Substrate‐Independent Growth of Vertically Standing Graphene Using A High‐Flux Plasma‐Enhanced Chemical Vapor Deposition (Adv. Mater. Interfaces 18/2020)
Author(s) -
Wu Zhiheng,
Zhang Yongshang,
Shen Yonglong,
Zhang Wei,
Shao Guosheng
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202070100
Subject(s) - materials science , graphene , chemical vapor deposition , flux (metallurgy) , plasma , substrate (aquarium) , deposition (geology) , chemical engineering , nanotechnology , plasma processing , optoelectronics , metallurgy , paleontology , oceanography , physics , quantum mechanics , sediment , geology , engineering , biology
In article number 2000854, Yonglong Shen, Guosheng Shao, and co‐workers propose a large‐area deposition of structurally tuned vertically standing graphene (VSG) using a scalable high‐flux plasma enhanced chemical vapor deposition (HPECVD) system. The generated energetic electrons in high‐flux plasma boost the reaction kinetics of the growth process at low substrate temperature, enabling a unique growing mechanism.
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