Premium
Field Effect Transistors: High‐Performance Phosphorene‐Based Transistors Using a Novel Exfoliation‐Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)
Author(s) -
Rajabali Mona,
Esfandiari Mehrnaz,
Rajabali Shima,
VakiliTabatabaei Mojdeh,
Mohajerzadeh Shokatollah,
Mohajerzadeh Shams
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202070096
Subject(s) - phosphorene , materials science , exfoliation joint , crystallization , field effect transistor , silicon , optoelectronics , transistor , laser , nanotechnology , chemical engineering , optics , graphene , electrical engineering , physics , voltage , engineering
Laser‐assisted evolution of few‐layer phosphorene sheets directly on silicon substrates on desired locations is introduced. A 1064 nm laser source and a combination of Ar:O 2 and He:H 2 gases are exploited for an exfoliation/transfer‐free direct crystallization of red phosphorus. High field‐effect mobility of 1450 cm 2 (V s) −1 and on/off ratio of 10 3 are obtained. More details can be found in article number 2000774 by Shams Mohajerzadeh and co‐workers.