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Light‐Emitting Diodes: Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition (Adv. Mater. Interfaces 12/2020)
Author(s) -
Kim GiHwan,
Noh Kyeongchan,
Han Jisu,
Kim Minsu,
Oh Nuri,
Lee Woongkyu,
Na Hyon Bin,
Shin Chansun,
Yoon TaeSik,
Lim Jaehoon,
Cho SeongYong
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202070067
Subject(s) - atomic layer deposition , materials science , optoelectronics , quantum dot , diode , brightness , light emitting diode , layer (electronics) , luminance , oled , nanotechnology , optics , physics
The atomic layer deposited (ALD) ZnO significantly enhances the luminance and device lifetime of green‐emitting quantum dot (QD) light‐emitting diodes. In article number 2000343, Jaehoon Lim, Seong‐Yong Cho, and coworkers show that ALD ZnO provides improved interfacial property with QDs due to the smooth roughness from the ALD growth nature and ligand exchange behavior.