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Graphene/MoS 2 /Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance
Author(s) -
Gao Shan,
Wang Ziqian,
Wang Huide,
Meng Fanxu,
Wang Pengfei,
Chen Si,
Zeng Yonghong,
Zhao Jinlai,
Hu Haiguo,
Cao Rui,
Xu Zhongquan,
Guo Zhinan,
Zhang Han
Publication year - 2021
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202001730
Subject(s) - graphene , materials science , photodetector , heterojunction , optoelectronics , responsivity , molybdenum disulfide , band gap , schottky barrier , electron mobility , nanotechnology , diode , metallurgy
Molybdenum disulfide (MoS 2 ) is considered as a promising 2D material for optoelectronic applications due to its excellent electrical and optical properties. A semimetal material with zero bandgap, like graphene, can extend response range of MoS 2 ‐based photodetectors to wider spectral region. Here, a graphene/MoS 2 /graphene vertical heterostructure is demonstrated, where Schottky barriers are formed between MoS 2 and graphenes. The introduction of graphene can effectively widen the working wavelength of the device from visible to IR range. Simultaneously, the shortened transmit distance for the photogenerated carriers between the source and drain electrodes in the vertical heterostructure leads to faster response speed compared with MoS 2 ‐based photodetectors. Besides, the graphene/MoS 2 /graphene photodetector shows excellent performance with an enhanced responsivity of 414 A W −1 at 532 nm and 376 A W −1 at 2000 nm, and a broad working wavelength ranging from 405 to 2000 nm. These excellent performances prove that the design of graphene based vertical heterostructure can provide new ideas for the development of high‐performance photodetectors in future.

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