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Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors
Author(s) -
Lloret Vicent,
Nuin Edurne,
Kohring Malte,
Wild Stefan,
Löffler Mario,
Neiss Christian,
Krieger Michael,
Hauke Frank,
Görling Andreas,
Weber Heiko B.,
Abellán Gonzalo,
Hirsch Andreas
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202001290
Subject(s) - passivation , perylene , surface modification , materials science , van der waals force , molecule , amide , density functional theory , non covalent interactions , field effect transistor , phosphorene , nanotechnology , combinatorial chemistry , photochemistry , computational chemistry , transistor , organic chemistry , chemistry , hydrogen bond , graphene , layer (electronics) , physics , voltage , quantum mechanics
Amongst the different existing methods to passivate black phosphorus (BP) from environmental degradation, the noncovalent functionalization with perylene diimides (PDI) has been postulated as one of the most promising routes because it allows preserving its electronic properties. This work describes the noncovalent functionalization and outstanding environmental protection of BP with tailor made PDI having peri‐amide aromatic side chains, which include phenyl and naphthyl groups, exhibiting a significantly increased molecule‐BP interaction. These results are rationalized by density functional theory (DFT) calculations showing that the adsorption energies are mainly governed by van der Waals (vdW) interactions and increase concomitantly with the aromatic character of the side chains. The resulting hybrids are thoroughly characterized showing enhanced ambient and thermal stabilities. Last but not least, hybrid organic–inorganic BP‐PDI field effect transistors (FETs) are studied for the first time showing the usefulness of PDI derivatives as efficient passivation layers while obtaining improved values of electron mobilities. These results pave the way for the use of optimized PDIs by molecular engineering to preserve the electronic properties of BP FETs, using straightforward wet chemical approaches.