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Bandgap Renormalization in Monolayer MoS 2 on CsPbBr 3 Quantum Dots via Charge Transfer at Room Temperature
Author(s) -
Adhikari Subash,
Kim JiHee,
Song Bumsub,
Doan ManhHa,
Tran Minh Dao,
Gomez Leyre,
Kim Hyun,
Gul Hamza Zad,
Ghimire Ganesh,
Yun Seok Joon,
Gregorkiewicz Tom,
Lee Young Hee
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202000835
Subject(s) - materials science , band gap , quantum dot , heterojunction , condensed matter physics , monolayer , optoelectronics , fermi level , exciton , superlattice , electron , physics , nanotechnology , quantum mechanics
Many‐body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to intrinsic bandgap shrinking, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin‐orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, the augmented bandgap renormalization (BGR) in monolayer MoS 2 anchored on CsPbBr 3 perovskite quantum dots at room temperature via charge transfer is presented. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS 2 . The bandgap in heterostructure is red‐shifted by 84 meV with minimal pump fluence, the highest BGR in monolayer MoS 2 at room temperature, which saturates with a further increase of pump fluence. Further, it is found that the magnitude of BGR inversely relates to Thomas–Fermi screening length. This provides plenty of room to explore the BGR within existing vast libraries of large bandgap van der Waals heterostructure toward practical devices such as solar cells, photodetectors, and light‐emitting‐diodes.