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Ultrasonic Spray Pyrolysis of Antimony‐Doped Tin Oxide Transparent Conductive Coatings
Author(s) -
Kim Jaewon,
Murdoch Billy J.,
Partridge James G.,
Xing Kaijian,
Qi DongChen,
LiptonDuffin Josh,
McConville Christopher F.,
Embden Joel,
Gaspera Enrico Della
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202000655
Subject(s) - materials science , dopant , doping , tin oxide , x ray photoelectron spectroscopy , transparent conducting film , optoelectronics , sheet resistance , nanotechnology , thin film , chemical engineering , layer (electronics) , engineering
Transparent conducting oxides are fundamental for the fabrication of optoelectronic devices including touchscreen displays, solar cells, and light emitting diodes. However, they mostly rely on rare elements and expensive vacuum‐based deposition methods that negatively affect the overall cost of optoelectronics. Here, a detailed investigation on the synthesis of antimony‐doped tin oxide films using an ultrasonic spray coating system is presented. High‐quality, crystalline SnO 2 films are deposited via decomposition of metal precursors sprayed directly onto hot (>400 °C) substrates. Doping is easily achieved by adding the dopant salt to the spray solution, and the presence of the dopant atoms heavily influences the optical, electrical, and structural properties of SnO 2 . These coatings are characterized using a comprehensive suite of techniques including X‐ray diffraction, electron microscopy, X‐ray and ultraviolet photoelectron spectroscopies, Hall effect measurements, optical spectroscopy in the visible and near infrared, and atomic force microscopy, in order to elucidate the relationship between the synthetic conditions and functional properties. Through a careful optimization process, Sb‐doped SnO 2 coatings showing transmittance values in the visible spectrum between 80% and 90%, and sheet resistances of 10–20 Ω/sq −1 are achieved. Such values are suitable for immediate applications of these Sb‐doped SnO 2 films as high‐performance transparent conductors.