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In‐Depth Atomic Mapping of Polarization Switching in a Ferroelectric Field‐Effect Transistor
Author(s) -
Li Xiaoyan,
Zhu Qiuxiang,
Vistoli Lorenzo,
Barthélémy Agnès,
Bibes Manuel,
Fusil Stéphane,
Garcia Vincent,
Gloter Alexandre
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202000601
Subject(s) - materials science , ferroelectricity , polarization (electrochemistry) , transistor , field effect transistor , optoelectronics , nanoscopic scale , atomic units , mott insulator , condensed matter physics , nanotechnology , voltage , dielectric , electrical engineering , chemistry , physics , quantum mechanics , engineering
The ferroelectric control of a Mott transistor is a promising strategy for nonvolatile low‐power electronics. Understanding the fundamental limits of the ferroelectric‐field effect is challenging, as the relevant length scales are restricted to a few atomic planes within the interface. Here, the polarization switching process of a prototypical ferroelectric Mott transistor combining BiFeO 3 , a ferroelectric material with a large polarization, and (Ca,Ce)MnO 3 , a charge‐transfer insulator in which a few percent of Ce doping triggers a metal–insulator transition is investigated. While scanning probe microscopy indicates a complete switching of the ferroelectric gate, in‐depth atomic‐scale polarization mapping with scanning transmission electron microscopy reveals incomplete polarization reversal at the interface. Therefore, transport measurements show that the electronic properties of the Mott channel are virtually unchanged by the polarization direction. Nevertheless, in nanometer size areas where interfacial polarization switching occurs, dramatic changes of the electronic properties of (Ca,Ce)MnO 3 are revealed. These results indicate how the performance of mesoscale Mott devices is hindered, and at the same time reveal the possibility of nanoscale energy‐efficient Mott transistors.