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Quasi‐2D Crystalline γ‐Alumina Grown by Graphene‐Assisted Atomic Layer Deposition
Author(s) -
Kheirandish Elaheh,
Schofield Marvin,
GajdardziskaJosifovska Marija,
Kouklin Nikolai
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202000561
Subject(s) - materials science , graphene , atomic layer deposition , ohmic contact , amorphous solid , nanocrystalline material , spinel , nanotechnology , chemical engineering , transmission electron microscopy , optoelectronics , layer (electronics) , crystallography , metallurgy , chemistry , engineering
This study presents a facile high‐yield bottom‐up fabrication and morphology‐structure investigations of a free‐standing network of multi‐layer quasi‐2D flakes consisting of intrinsically nonlayered γ‐Al 2 O 3 . The synthesis comprises a multi‐cycle atomic layer deposition (ALD) of amorphous alumina that uses an interconnected graphene network as a growth scaffold followed by ≈ 800 °C air anneal. The structures are studied by X‐ray diffraction, selected area electron diffraction, and high‐resolution transmission electron microscopy, while electric properties are assessed with the help of two‐terminal dc‐transport measurements. The individual flakes comprise nanocrystalline phase cubic spinel γ‐Al 2 O 3 with a close‐packed cubic texture in the 〈 111 〉 cubic ALD‐induced growth direction. The charge transport is confirmed to be Ohmic with the room temperature electrical conductivity approaching ≈ 10 −8 S m −1 . This work opens a door to a low‐cost highly scalable synthesis of a variety of quasi‐2D metal oxides for widespread uses ranging from support material, sensing to environmental remediation.