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Modification of the Electronic Transport in Atomically Thin WSe 2 by Oxidation
Author(s) -
Lin YuChuan,
Bersch Brian M.,
Addou Rafik,
Xu Ke,
Wang Qingxiao,
Smyth Christopher M.,
Jariwala Bhakti,
Walker Roger C.,
FullertonShirey Susan K.,
Kim Moon J.,
Wallace Robert M.,
Robinson Joshua A.
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202000422
Subject(s) - materials science , tungsten diselenide , optoelectronics , transistor , resistive touchscreen , semiconductor , nanotechnology , sapphire , tungsten disulfide , nanoelectronics , pmos logic , catalysis , optics , electrical engineering , voltage , laser , composite material , biochemistry , chemistry , physics , transition metal , engineering
Atomically thin tungsten diselenide (WSe 2 ) is a promising 2D semiconductor for nanoelectronics and optoelectronics. Using UV ozone and low‐power O 2 plasma treatments, it is demonstrated that the formation of WSe 2(1− x ) O 2 x (WSe y O x ) leads to hysteretic behavior in vertical transport measurements and also enables to an improvement in the p‐type transfer characteristics in lateral transport measurements. The amount of oxidation correlates well with the resistive switch behavior in oxidized WSe 2 /graphene, and WSe y O x formation under the electrical contact of the horizontal devices leads to increased p‐branch on/off by 100×. In addition to its effect for residue removal, oxidation on field effect transistor channel also helps mitigate n‐type dominated transfer characteristics of WSe 2 commonly seen on sapphire. It is demonstrated that light oxidation of WSe 2 is a multifunctional post‐growth treatment that enables vertical resistive switch junctions, contact improvement, and continuous tuning of transistor transport properties.