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Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS 2
Author(s) -
Leonhardt Alessandra,
Rosa César Javier Lockhart,
Nuytten Thomas,
Banszerus Luca,
Sergeant Stefanie,
Mootheri Vivek K.,
Taniguchi Takashi,
Watanabe Kenji,
Stampfer Christoph,
Huyghebaert Cedric,
De Gendt Stefan
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202000413
Subject(s) - photoluminescence , materials science , characterization (materials science) , optoelectronics , interface (matter) , substrate (aquarium) , nanotechnology , chemical physics , recombination , composite material , biochemistry , oceanography , physics , chemistry , capillary number , capillary action , geology , gene
Defect characterization of 2D materials is a critical aspect for their successful integration in future electronic devices. Here, a simple characterization technique is proposed that opens a path for fast, non‐invasive, quality assessment of transition metal dichalcogenide layers, such as MoS 2 , and their interfaces. It relates to the correlation between substrate‐induced traps and the indirect‐to‐direct photoluminescence peak ratio. It is shown that the indirect peak is quenched when interfacial trap sites are present. A physical mechanism is proposed to explain the observations based on different recombination mechanisms.