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Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection
Author(s) -
Sugathan Anumol,
Saigal Nihit,
Rajasekar Guru Pratheep,
Pandey Anshu
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.202000056
Subject(s) - materials science , photocurrent , responsivity , heterojunction , optoelectronics , nanocrystal , photoconductivity , photodetection , lead sulfide , silicon , photodetector , nanotechnology , quantum dot
Abstract This study describes the optoelectronic characteristics of CuFeS 2 /Si nanocrystal/bulk heterojunctions. These heterojunctions show a strong photocurrent response under ambient conditions upon excitation from a wide optical spectrum, from 460 to 2200 nm. The devices comprise of a heterojunction formed between heavily doped n‐type silicon (1–100 Ω cm) and copper iron sulfide (CuFeS 2 ) nanocrystal films. Over the spectral range 460–2200 nm the device shows a fast response (20 µs at NIR wavelengths), along with responsivity and detectivity of 4.68 mA W −1 and 5.29 × 10 9 Jones at 1900 nm wavelength. The photocurrent is further observed to be a nonlinear function of power. These properties of the devices are discussed in terms of a defect filling mechanism. Besides their regular photoresponse described above, the devices also exhibit a slower photothermal response, allowing these to also sense hot objects (450 K; excess 6 mW incident onto the device) within the focal plane, thereby extending the useful sensing range of the devices deeper into the infrared.