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Wafer Bonding: Solution‐Processed‐ZnO‐Mediated Semiconductor Bonding with High Mechanical Stability, Electrical Conductivity, Optical Transparency, and Roughness Tolerance (Adv. Mater. Interfaces 22/2019)
Author(s) -
Yamashita Tatsushi,
Hirata Soichiro,
Inoue Ryoichi,
Kishibe Kodai,
Tanabe Katsuaki
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201970137
Subject(s) - materials science , semiconductor , fabrication , optical transparency , wafer , wafer bonding , surface roughness , transparency (behavior) , optoelectronics , surface finish , electrical conductor , conductivity , anodic bonding , electrical resistivity and conductivity , nanotechnology , composite material , electrical engineering , computer science , medicine , alternative medicine , computer security , pathology , engineering , chemistry
Semiconductor bonding mediated by a transparent conductive oxide, ZnO, prepared by a simple solution spin‐on process, is developed. The ZnO synthesis, sintering, and bonding processes are realized in a single step. The ZnO‐mediated bonds simultaneously exhibit high mechanical stability, electrical conductivity, optical transparency, and roughness tolerance. This efficient bonding scheme leads to a low‐cost, high‐performance optoelectronic device fabrication and integration. More details can be found in article number 1900921 by Tatsushi Yamashita, Katsuaki Tanabe, and co‐workers.