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Complex Oxides: Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse (Adv. Mater. Interfaces 18/2019)
Author(s) -
Chen PoWei,
Huang ShiauYuan,
Yuan ShuoHuang,
Chen YiAn,
Hsiao PoWen,
Wuu DongSing
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201970116
Subject(s) - materials science , photodetector , responsivity , ultraviolet , epitaxy , nanocrystalline material , annealing (glass) , optoelectronics , sputtering , thin film , nanotechnology , metallurgy , layer (electronics)
The quasi‐single‐crystalline ZnGa 2 O 4 deep‐ultraviolet (DUV) photodetector is achieved via the solid‐phase epitaxy method using the sputtering and rapid‐thermal annealing processes. Compared with the nanocrystalline ZnGa 2 O 4 photodetector, the responsivity of quasi‐single‐crystalline ZnGa 2 O 4 photodetector shows a relative enhancement of 256% at λ = 240 nm. More details can be found in article number 1901075 by Po‐Wei Chen, Dong‐Sing Wuu, and co‐workers.