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Gallium Nitride: Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth (Adv. Mater. Interfaces 18/2019)
Author(s) -
Park JeongHwan,
Lee JunYeob,
Park MunDo,
Min JungHong,
Lee JeSung,
Yang Xu,
Kang Seokjin,
Kim SangJo,
Jeong WooLim,
Amano Hiroshi,
Lee DongSeon
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201970114
Subject(s) - graphene , materials science , decomposition , gallium nitride , gallium , nitrogen , substrate (aquarium) , carbon fibers , nanotechnology , chemical engineering , composite material , layer (electronics) , metallurgy , chemistry , composite number , organic chemistry , oceanography , geology , engineering
The occurrence of graphene loss due to nitrogen, which Jeong‐Hwan Park, Hiroshi Amano, Dong‐Seon Lee, and co‐workers claim to occur in the article number 1900821, generated from GaN decomposition. In the bottom side of the image, graphene loss is occurring by GaN template decomposition while the top side of the image no decomposition and graphene‐loss. During the decomposition, nitrogen and carbon escape from the substrate leaving gallium on the surface.