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Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)
Author(s) -
Sundaram Suresh,
Li Xin,
Halfaya Yacine,
Ayari Taha,
Patriarche Gilles,
Bishop Christopher,
Alam Saiful,
Gautier Simon,
Voss Paul L.,
Salvestrini Jean Paul,
Ougazzaden Abdallah
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201970102
Subject(s) - materials science , epitaxy , van der waals force , nanorod , nanodevice , boron nitride , optoelectronics , hexagonal boron nitride , nanotechnology , nitride , nanowire , wafer , cathodoluminescence , diode , gallium nitride , graphene , layer (electronics) , luminescence , chemistry , organic chemistry , molecule
In article number 1900207, Suresh Sundaram, Abdallah Ougazzaden, and co‐workers demonstrate self‐organized GaN nanorods formation on layered h‐BN templates by van der Waals epitaxial growth. This approach is used to grow III‐N nanowire light‐emitting diodes. In addition, this approach also mitigates transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h‐BN) are grown at the wafer‐scale and in one epitaxial growth run.