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Oxidation: Fundamental Insights into the Performance Deterioration of Phosphorene due to Oxidation: A GW Method Investigation (Adv. Mater. Interfaces 1/2019)
Author(s) -
Yi Zhijun,
Ma Yuchen,
Zheng Yazhuo,
Duan Yifeng,
Li Huichao
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201970005
Subject(s) - phosphorene , materials science , vacancy defect , oxygen , optoelectronics , chemical physics , nanotechnology , chemical engineering , photochemistry , condensed matter physics , band gap , chemistry , organic chemistry , physics , engineering
In article number 1801175 , Zhijun Yi, Yuchen Ma, and co‐workers show that isolated oxygen defects are electronically inactive. However, oxygen would be preferably chemisorbed around a single vacancy to form vacancy‐oxygen complex. The formation of vacancy#x02010;oxygen complex is harmful to performance in electronics and optoelectronics. Understanding the microscopic mechanism of the phosphorene oxidation can be helpful for protecting phosphorene from deterioration.

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