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Enhanced Gas Sensing Performance of Organic Field‐Effect Transistors by Modulating the Dimensions of Triethylsilylethynyl‐Anthradithiophene Microcrystal Arrays
Author(s) -
Kwak Do Hun,
Seo Yena,
Anthony John E.,
Kim Seunghyun,
Hur Jiyeon,
Chae Huijeong,
Park Hui Joon,
Kim BongGi,
Lee Eunho,
Ko Sunglim,
Lee Wi Hyoung
Publication year - 2020
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201901696
Subject(s) - materials science , polydimethylsiloxane , organic field effect transistor , field effect transistor , crystallization , dielectric , electron mobility , transistor , optoelectronics , semiconductor , diffusion , crystal (programming language) , nanotechnology , voltage , chemical engineering , electrical engineering , engineering , physics , computer science , thermodynamics , programming language
This paper systematically compares the gas sensing properties of organic field‐effect transistors (OFETs) based on patterned 5,11‐bis(triethylsilylethynyl)anthradithiophene (TES‐ADT) films, by adopting TES‐ADT crystal arrays of various shapes and dimensions. The patterning and crystallization of spin‐cast TES‐ADT layers are achieved by the use of a solvent‐containing engraved polydimethylsiloxane (PDMS) mold. Decreasing width of the TES‐ADT pattern enhances gas sensing performance, as well as field‐effect mobility of OFETs. The decreased grain boundary density at narrower line width contributes to the increase of field‐effect mobility. On the other hand, the increased sensing performance is mainly due to the increased area of crystal edges, which provides a diffusion pathway for gas molecules to arrive at the semiconductor‐dielectric interface. This study provides new perspectives on the diffusion pathway of gas molecules in OFET‐based gas sensor, and will be useful for the design of active channel to boost the gas sensing properties of OFETs.