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Mn 3 O 4 Nanomaterials Functionalized with Fe 2 O 3 and ZnO: Fabrication, Characterization, and Ammonia Sensing Properties
Author(s) -
Bigiani Lorenzo,
Zappa Dario,
Maccato Chiara,
Gasparotto Alberto,
Sada Cinzia,
Comini Elisabetta,
Barreca Davide
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201901239
Subject(s) - fabrication , materials science , nanomaterials , characterization (materials science) , surface modification , ammonia , nanotechnology , chemical vapor deposition , selectivity , nanocomposite , oxide , sputtering , chemical engineering , thin film , metallurgy , catalysis , chemistry , organic chemistry , medicine , alternative medicine , pathology , engineering
The fabrication of metal oxide‐based gas sensors with tailored structural design is of particular importance for the early recognition of poisonous/explosive analytes like ammonia, an irritating chemical occurring in a plethora of practical contexts. In this regard, the present work reports on the fabrication and gas sensing application of p‐Mn 3 O 4 /n‐M x O y nanocomposites with M x O y = Fe 2 O 3 or ZnO. The target systems are developed by chemical vapor deposition of Mn 3 O 4 nanosystems on alumina substrates and subsequent functionalization with iron or zinc oxides by sputtering under mild conditions. Material characterization reveals the formation of high purity composites with a controllable dispersion of Fe 2 O 3 or ZnO into Mn 3 O 4 , and a close contact between the single constituents. The latter feature, resulting in the formation of p‐n junctions and in a tailored modulation of Mn 3 O 4 hole accumulation layer, is of strategic importance in obtaining promising responses to ammonia already at moderate temperatures. Furthermore, Fe 2 O 3 or ZnO functionalization empowers the pristine Mn 3 O 4 with good selectivity toward NH 3 against other potential interferents. These results, along with the very favorable detection limits, provide new physical insights for the implementation of gas‐sensitive devices with p‐n junctions aimed at practical end uses.