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Elucidating the Impact of Charge Selective Contact in Halide Perovskite through Impedance Spectroscopy
Author(s) -
Khan Mohd Taukeer,
Salado Manuel,
Almohammedi Abdullah,
Kazim Samrana,
Ahmad Shahzada
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201901193
Subject(s) - perovskite (structure) , formamidinium , materials science , triiodide , dielectric spectroscopy , halide , iodide , charge carrier , electron mobility , perovskite solar cell , band gap , chemical physics , analytical chemistry (journal) , optoelectronics , inorganic chemistry , solar cell , dye sensitized solar cell , chemistry , crystallography , electrode , electrochemistry , organic chemistry , electrolyte
The electron and hole selective contact (SC) plays a pivotal role in the performance of perovskite solar cells. In order to separate the interfacial phenomenon from bulk, the influence of charge SC is elucidated, by means of impedance spectroscopy. The specific role played by TiO 2 and Spiro‐OMeTAD as electron and hole SC in perovskite solar cells is investigated at short circuit condition at different temperatures. The methylammonium lead triiodide (MAPbI 3 ) and mixed perovskite of formamidinium lead iodide and methylammonium lead bromide namely; (FAPbI 3 ) 0.85 (MAPbBr 3 ) 0.15 are probed and parameters such as charge carrier mobility, recombination resistance, time constant, and charge carrier kinetics in perovskite layer and at the interface of perovskite/SC are elucidated. Charge carrier mobility in mixed perovskite is found to be nearly two order of magnitude higher as compared to MAPbI 3 . Moreover, the carrier mobility in devices with only electron SC is found to be higher as compared only hole SC. The charge accumulation at TiO 2 /perovskite/ Spiro ‐OMeTAD interfaces is studied via frequency dependent capacitance, revealing higher charge accumulation at perovskite/S piro ‐OMeTAD than at TiO 2 /perovskite interface. By performing varying temperature frequency dependent capacitance measurements the distribution of density of state within the bandgap of the perovskites, the emission rate of electrons from the trap states and traps activation energy is determined.