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High SERS Sensitivity Enabled by Synergistically Enhanced Photoinduced Charge Transfer in Amorphous Nonstoichiometric Semiconducting Films
Author(s) -
Fan Xingce,
Li Mingze,
Hao Qi,
Zhu Minshen,
Hou Xiangyu,
Huang Hao,
Ma Libo,
Schmidt Oliver G.,
Qiu Teng
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201901133
Subject(s) - materials science , amorphous solid , raman scattering , raman spectroscopy , substrate (aquarium) , fermi level , band gap , optoelectronics , nanotechnology , exciton , charge (physics) , condensed matter physics , optics , chemistry , organic chemistry , physics , oceanography , quantum mechanics , geology , electron
Semiconducting surface‐enhanced Raman scattering (SERS) materials have attracted tremendous attention for their good signal uniformity, chemical stability, and biocompatibility. Here, a new concept to design high sensitivity semiconducting SERS substrates through integration of both amorphous and nonstoichiometric features of WO 3− x thin films is presented. The integration of these two features provides narrower bandgap, additional defect levels within the bandgap, stronger exciton resonance, and higher electronic density of states near the Fermi level. These characteristics lead to a synergy to promote the photoinduced charge transfer resonance between analytes and substrate by offering efficient routes of charge escaping and transferring as well as strong vibronic coupling, thus realizing high SERS activity on amorphous nonstoichiometric WO 3− x films.