Premium
Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors
Author(s) -
Jeong Jaehoon,
Marques Gabriel Cadilha,
Feng Xiaowei,
Boll Dominic,
Singaraju Surya Abhishek,
AghassiHagmann Jasmin,
Hahn Horst,
Breitung Ben
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201901074
Subject(s) - materials science , electrolyte , ionic conductivity , ethylene oxide , thin film transistor , chemical engineering , trifluoromethanesulfonate , conductivity , ionic bonding , ion , curing (chemistry) , indium tin oxide , electrochromic devices , ionic liquid , polymer chemistry , polymer , nanotechnology , copolymer , thin film , layer (electronics) , organic chemistry , electrode , composite material , chemistry , engineering , catalysis
Electrolyte‐gated transistors (EGTs) represent an interesting alternative to conventional dielectric‐gating to reduce the required high supply voltage for printed electronic applications. Here, a type of ink‐jet printable ion‐gel is introduced and optimized to fabricate a chemically crosslinked ion‐gel by self‐assembled gelation, without additional crosslinking processes, e.g., UV‐curing. For the self‐assembled gelation, poly(vinyl alcohol) and poly(ethylene‐ alt ‐maleic anhydride) are used as the polymer backbone and chemical crosslinker, respectively, and 1‐ethyl‐3‐methylimidazolium trifluoromethanesulfonate ([EMIM][OTf]) is utilized as an ionic species to ensure ionic conductivity. The as‐synthesized ion‐gel exhibits an ionic conductivity of ≈5 mS cm −1 and an effective capacitance of 5.4 µF cm −2 at 1 Hz. The ion‐gel is successfully employed in EGTs with an indium oxide (In 2 O 3 ) channel, which shows on/off‐ratios of up to 1.3 × 10 6 and a subthreshold swing of 80.62 mV dec −1 .