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Incorporating Niobium in MoS 2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
Author(s) -
Zhao Rui,
Lo ChunLi,
Zhang Fu,
Ghosh Ram Krishna,
Knobloch Theresia,
Terrones Mauricio,
Chen Zhihong,
Robinson Joshua
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201901055
Subject(s) - materials science , niobium , interconnection , back end of line , scaling , electromigration , optoelectronics , diffusion , copper , nanotechnology , engineering physics , transistor , nanoscopic scale , node (physics) , electrical engineering , voltage , metallurgy , computer science , dielectric , composite material , computer network , geometry , mathematics , physics , engineering , thermodynamics , structural engineering
The continuous scaling of transistors has led to unprecedented challenges for interconnect technologies. Conventional barriers fail when thinned below 4 nm; therefore, novel materials and back‐end‐of‐line (BEOL) compatible synthesis are urgently needed. 2D transition metal dichalcogenides present a unique opportunity for addressing the scaling of interconnects. Here, nanometer thick Nb‐incorporated MoS 2 is successfully synthesized at BEOL compatible temperatures and their abilities of blocking Cu atom diffusion are investigated. Nb incorporation of MoS 2 is systematically studied at 450 °C and its growth dynamics is compared with those carried out at high temperatures. The addition of a few percent Nb in MoS 2 enhances breakdown time by more than 100×, reaching a failure time >12 500 s under the electric field of 7 MV cm −1 . These results suggest that integration of Nb‐incorporated MoS 2 in electronic technologies is a promising route for the sub‐5 nm technology node.