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Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures
Author(s) -
Michaels Julian A.,
Wood Derek R.,
Froeter Paul J.,
Huang Wen,
Sievers Dane J.,
Li Xiuling
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201901022
Subject(s) - materials science , layer (electronics) , optoelectronics , thermal , fuse (electrical) , electronics , perforation , electronic circuit , silicon nitride , composite material , voltage , nitride , thermal conductivity , nanotechnology , engineering physics , electrical engineering , engineering , physics , meteorology , punching
Strain‐induced self‐rolled‐up membranes (S‐RuM) are structures formed spontaneously by releasing a strained layer or layer stacks from its mechanical support, with unique applications in passive photonics, electronics, and bioengineering. Depending on the thermal properties of the strained layers, these structures can experience various thermally induced deformations. These deformations can be avoided and augmented with the addition of strategically placed perforations in the membrane. This study reports on the use of perforations to modify the thermal effects on strained silicon nitride S‐RuM structures. A programmable fuse with well‐defined thermal threshold, ultrasmall footprint, and 2–3 V voltage rating is demonstrated, which can potentially serve as an on‐chip sensing device for power electronic circuits.