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Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth
Author(s) -
Park JeongHwan,
Lee JunYeob,
Park MunDo,
Min JungHong,
Lee JeSung,
Yang Xu,
Kang Seokjin,
Kim SangJo,
Jeong WooLim,
Amano Hiroshi,
Lee DongSeon
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201900821
Subject(s) - graphene , materials science , chemical vapor deposition , trimethylgallium , graphene oxide paper , graphene foam , metalorganic vapour phase epitaxy , gallium nitride , graphene nanoribbons , substrate (aquarium) , decomposition , chemical engineering , nanotechnology , epitaxy , layer (electronics) , chemistry , organic chemistry , geology , engineering , oceanography
Graphene has been adopted in III−V material growth since it can reduce the threading dislocations and the III−V epilayer can easily be separated from the substrate due to the weak chemical bond. However, depending on the substrate supporting the graphene, some substrates decompose in the III−V material growth environment, which results in the problem that no graphene remains. In this study, the influence of temperature‐dependent substrate decomposition on graphene through an annealing process that resembles conventional growth conditions in metal–organic chemical vapor deposition (MOCVD) is investigated. It is also confirmed that trimethylgallium, hydrogen, and ammonia gases do not directly affect the graphene loss through gallium nitride (GaN) growth on a graphene/sapphire. In addition, GaN grown on graphene/sapphire could separate, but GaN grown on a graphene/GaN template could not be separated due to GaN template decomposition and related graphene damage. Through further investigation for graphene/gallium arsenide, it is deduced that the gallium generated by substrate decomposition does not play a major role in damage to the graphene but instead the nitrogen generated by substrate decomposition is closely related to it. These results suggest that it is very important to adopt a decomposition‐free substrate that do not damage graphene during GaN growth in MOCVD.