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Metal Oxide Semiconductors: Direct Photopatterning of Solution–Processed Amorphous Indium Zinc Oxide and Zinc Tin Oxide Semiconductors—A Chimie Douce Molecular Precursor Approach to Thin Film Electronic Oxides (Adv. Mater. Interfaces 15/2018)
Author(s) -
Sanctis Shawn,
Hoffmann Rudolf C.,
Bruns Michael,
Schneider Jörg J.
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201870073
Subject(s) - materials science , zinc , indium , oxide , thin film transistor , semiconductor , indium tin oxide , thin film , amorphous solid , metal , tin , inorganic chemistry , oxide thin film transistor , nanotechnology , chemical engineering , optoelectronics , metallurgy , layer (electronics) , crystallography , chemistry , engineering
In article number 1800324 by Shawn Sanctis, Jörg J. Schneider, and co‐workers direct photopatterning of indium zinc oxide (IZO) and zinc tin oxide (ZTO) semiconductors using molecular precursor compounds is described. Resulting thin film transistors exhibit mobilities of 7.8 cm 2 V −1 s −1 (IZO) and 3.6 cm 2 V −1 s −1 (ZTO), respectively. This straight‐forward precursor UV‐photo‐patterning demonstrates its feasibility as a low‐cost method towards integration of solution processed oxide films into large area electronics.