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Atomic Layer Deposition: Effect of Various Oxidants on Reaction Mechanisms, Self‐Limiting Natures and Structural Characteristics of Al 2 O 3 Films Grown by Atomic Layer Deposition (Adv. Mater. Interfaces 14/2018)
Author(s) -
Wang Haoran,
Liu Yunfei,
Liu Hui,
Chen Zheng,
Xiong Pengpeng,
Xu Xiangchen,
Chen Fangyi,
Li Kun,
Duan Yu
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201870070
Subject(s) - atomic layer deposition , deposition (geology) , materials science , limiting , layer (electronics) , chemical engineering , analytical chemistry (journal) , nanotechnology , inorganic chemistry , chemistry , organic chemistry , mechanical engineering , paleontology , sediment , engineering , biology
The reaction of atomic layer deposition (ALD) is a self‐limiting process, however, it is difficult to determine the reaction degree, because each oxidant has their own reaction router and different surface absorption coefficient. In article number 1701248 , Haoran Wang, Yu Duan and co‐workers describe an easy method to judge the reaction process of ALD by characterized the mean squared coefficient of mass increments for each cycle.