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Metal‐Insulator Transition: 3D Local Manipulation of the Metal–Insulator Transition Behavior in VO 2 Thin Film by Defect‐Induced Lattice Engineering (Adv. Mater. Interfaces 8/2018)
Author(s) -
Jia Qi,
Grenzer Jörg,
He Huabing,
Anwand Wolfgang,
Ji Yanda,
Yuan Ye,
Huang Kai,
You Tiangui,
Yu Wenjie,
Ren Wei,
Chen Xinzhong,
Liu Mengkun,
Facsko Stefan,
Wang Xi,
Ou Xin
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201870034
Subject(s) - materials science , fabrication , metal–insulator transition , metamaterial , insulator (electricity) , optoelectronics , nanotechnology , lattice (music) , condensed matter physics , photonics , transition metal , field effect transistor , thin film , metal , transistor , electrical engineering , metallurgy , medicine , biochemistry , chemistry , alternative medicine , physics , pathology , voltage , acoustics , engineering , catalysis
3D local manipulation of metal‐insulator transition in VO 2 is achieved by noble gas ion implantation, which is essential for the fabrication of highly integrated and tunable electronic or photonic devices, for example, metamaterials, field‐effect transistors, high‐density memory devices and optical manipulators. This is reported by Xin Ou and co‐workers in article number 1701268 .