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Atomic Layer Deposition of Al 2 O 3 Directly on 2D Materials for High‐Performance Electronics
Author(s) -
Li Na,
Wei Zheng,
Zhao Jing,
Wang Qinqin,
Shen Cheng,
Wang Shuopei,
Tang Jian,
Yang Rong,
Shi Dongxia,
Zhang Guangyu
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201802055
Subject(s) - materials science , atomic layer deposition , dielectric , graphene , layer (electronics) , optoelectronics , nanotechnology , high κ dielectric , deposition (geology) , nucleation , dangling bond , chemical vapor deposition , silicon , paleontology , chemistry , organic chemistry , sediment , biology
Due to the lack of surface dangling bonds of 2D materials such as graphene, hexagonal boron nitride, MoS 2 etc., deposition of high‐κ dielectrics directly on such 2D materials by atomic layer deposition (ALD) is difficult and a nucleation layer is usually required. Here an ALD approach is developed to deposit high‐κ dielectric layer, e.g., Al 2 O 3 , directly on 2D materials without the aid of the nucleation layer or introducing structural damages. In this approach, an individual deposition cycle includes one incremental organometallic pulse and multiple H 2 O pulses to guarantee the uniform deposition of high‐quality high‐κ dielectric layers on graphene, MoS 2 , and other 2D materials directly. Large‐scale top‐gated MoS 2 field‐effect transistors (FETs) with Al 2 O 3 as dielectric layers exhibit excellent performances including high on/off ratio exceeding 10 8 and mobility up to 70 cm 2 V −1 s −1 . The high‐quality Al 2 O 3 layer is also integrated into MoS 2 based flexible FETs and inverters, and a significant voltage gain of 412 is obtained. This ALD approach also works for other materials like gold with inert surfaces, showing great promise for novel electronics.