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Ion Beam Defect Engineering on ReS 2 /Si Photocathode with Significantly Enhanced Hydrogen Evolution Reaction
Author(s) -
Huang Wentian,
Zhou Qingwei,
Su Shaoqiang,
Li Jing,
Lu Xubin,
Gao Xingsen,
Wang Xin,
Jin Mingliang,
Zhou Guofu,
Zhang Zhang,
Liu Junming
Publication year - 2019
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201801663
Subject(s) - photocathode , photocurrent , materials science , hydrogen , water splitting , hydrogen production , silicon , reversible hydrogen electrode , irradiation , optoelectronics , electrode , ion , vacancy defect , ion beam , nanotechnology , beam (structure) , photocatalysis , optics , electrochemistry , chemistry , catalysis , electron , working electrode , physics , biochemistry , nuclear physics , organic chemistry , crystallography , quantum mechanics
Loading 2D layered transition metal dichalcogenides (TMDs) on p‐type silicon photocathode is suitable for hydrogen production in solar‐driven photoelectrochemical (PEC) water splitting. Similarly, various nanostructured TMDs exposing more active sites are widely explored for improving the PEC performances of composite photoelectrodes. Here, defect engineering using a controllable argon ion beam bombardment is presented on ReS 2 /Si photocathode. The atomic vacancy defects are introduced on the 2D ReS 2 to realize high‐density active sites, which significantly enhance the solar‐driven hydrogen evolution reaction performance of ReS 2 /Si photocathode. The highest photocurrent density of 18.5 mA cm −2 (at 0 V vs reversible hydrogen electrode) is achieved, under a simulated sun irradiation.