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Surface Amorphous Oxides Induced Electron Transfer into Complex Oxide Heterointerfaces
Author(s) -
Chen Zheng,
Chen Xing,
Mao Baohua,
Li Qingtian,
Zhang Meng,
Bo Hai,
Liu Zhi,
Tian He,
Zhang Ze,
Xie Yanwu
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201801216
Subject(s) - materials science , amorphous solid , oxide , heterojunction , complex oxide , nanotechnology , electron transfer , optoelectronics , crystallography , chemistry , metallurgy
Complex oxide heterointerfaces are interesting because they host many exotic emergent phenomena and have potential for unconventional oxide electronics. Crucial to explore these phenomena and applications is controlling electron transfer. In the past, this has been difficult to achieve in many heterointerfaces such as LaAlO 3 /SrTiO 3 fabricated on SrO‐terminated SrTiO 3 , while a great success has been made in LaAlO 3 /SrTiO 3 fabricated on TiO 2 ‐terminated SrTiO 3 . Here, a variety of (both TiO 2 ‐ and SrO‐terminated) SrTiO 3 ‐based heterostructures (not limited to LaAlO 3 /SrTiO 3 ) are capped with different kinds of amorphous oxides prepared at room temperature. It is found that more than 10 14 cm −2 electrons can be induced into heterointerfaces that are originally either conducting or insulating. By a thorough examination of various combinations between different heterostructues and different amorphous oxides, it is concluded that the observed effect is dominated by electron transfer from surface amorphous oxides into complex oxide heterointerfaces.