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Selected‐Area Chemical Nanoengineering of Vanadium Dioxide Nanostructures Through Nonlithographic Direct Writing
Author(s) -
Wang Shuxia,
Wei Wei,
Huang Tiantian,
Zhang Tianning,
Chen Zhimin,
Sun Liaoxin,
Xia Hui,
Li Tianxin,
Chen Xin,
Chen Xiaoshuang,
Lu Wei,
Dai Ning
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201800974
Subject(s) - nanoengineering , materials science , nanotechnology , nanostructure , nanoscopic scale , vanadium oxide , vanadium , lithography , reagent , oxide , optoelectronics , chemistry , organic chemistry , metallurgy
Abstract Nanoscale selected‐area chemical engineering is challenging but critical to manipulate carrier transport and realize multifunctional characteristics in advanced devices. Undesired chemical contaminants might occur in conventional lithographic processes and would degrade the characteristics of chemical‐sensitive vanadium oxide nanostructures. Here, a facile strategy is introduced to chemically engineer VO 2 nanostructures using a nonlithographic direct‐writing process without chemical reagents and sacrificial layers. Nanoscale selected‐area photooxidation promotes the formation of VO 2+ x patterns in VO 2 nanostructures. Selected‐area chemical nanoengineering allows direct designing and engineering of correlated vanadium oxides for controllable Mott field‐effect transistors and memory devices.