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Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High‐Performance Deep‐Ultraviolet Light‐Emitting Diodes
Author(s) -
Li Qiucheng,
Wu Qingqing,
Gao Jing,
Wei Tongbo,
Sun Jingyu,
Hong Hao,
Dou Zhipeng,
Zhang Zhepeng,
Rümmeli Mark H.,
Gao Peng,
Yan Jianchang,
Wang Junxi,
Li Jinmin,
Zhang Yanfeng,
Liu Zhongfan
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201800662
Subject(s) - materials science , sapphire , optoelectronics , chemical vapor deposition , epitaxy , wetting , light emitting diode , ultraviolet , boron nitride , substrate (aquarium) , nanotechnology , composite material , layer (electronics) , laser , optics , oceanography , physics , geology
The direct coating of 2D hexagonal boron nitride (h‐BN) on insulating solid glass will endow glass with advanced properties, thus offering killer applications of the new type hybrid of h‐BN glass. However, daunting challenges still remain regarding the direct growth methodology of h‐BN on glass. Herein, a catalyst‐free chemical vapor deposition route for the direct synthesis of 5 in. uniform h‐BN thin films on functional quartz and sapphire glass is developed. The optical transparency, surface wetting, and thermal conductivity of glass are readily tailored by varying the deposited h‐BN thicknesses from monolayer to over 20 layers. Encouragingly, the as‐obtained h‐BN/sapphire glass can serve as a stress‐releasing substrate for the van‐der‐Waals epitaxial growth of AlN functional layers, as well as a thermal conductive template for constructing high‐performance deep‐ultraviolet light‐emitting diodes. This work hereby provides a brand new direction for the application of h‐BN glass in next‐generation solid‐state lighting devices.