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Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe 2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition
Author(s) -
Kim TaeWan,
Park Hyeji,
Joung DaeHwa,
Kim DongHwan,
Lee Rochelle,
Shin Chae Ho,
Diware Mangesh,
Chegal Won,
Jeong Soo Hwan,
Shin Jae Cheol,
Park Jonghoo,
Kang SangWoo
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201800439
Subject(s) - materials science , wafer , chemical vapor deposition , thin film , epitaxy , molybdenum disulfide , nanotechnology , phase (matter) , semiconductor , optoelectronics , chemical engineering , analytical chemistry (journal) , layer (electronics) , organic chemistry , composite material , chemistry , engineering
2D materials beyond molybdenum disulfide such as molybdenum ditelluride (MoTe 2 ) have attracted increasing attention because of their distinctive properties, such as phase‐engineered, relatively narrow direct bandgap of 1.0–1.1 eV and superior carrier transport. However, a wafer‐scale synthesis process is required for achieving practical applications in next‐generation electronic devices using MoTe 2 thin films. Herein, the direct growth of atomically thin 1T′, 1T′–2H mixed, and 2H phases MoTe 2 films on a 4 in. SiO 2 /Si wafer with high spatial uniformity (≈96%) via metal–organic vapor phase deposition is reported. Furthermore, the wafer‐scale phase engineering of few‐layer MoTe 2 film is investigated by controlling the H 2 molar flow rate. While the use of a low H 2 molar flow rate results in 1T′ and 1T′–2H mixed phase MoTe 2 films, 2H phase MoTe 2 films are obtained at a high H 2 molar flow rate. Field‐effect transistors fabricated with the prepared 2H and 1T′ phases MoTe 2 channels reveal p‐type semiconductor and semimetal properties, respectively. This work demonstrates the potential for reliable wafer‐scale production of 1T′ and 2H phases MoTe 2 thin films employing the H 2 molar flow rate‐controlled phase tunable method for practical applications in next‐generation electronic devices as a p‐type semiconductor and Wyle semimetal.