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Atomic Layer Deposited TiO 2 –IrO x Alloy as a Hole Transport Material for Perovskite Solar Cells
Author(s) -
Tan Wanliang,
Hendricks Olivia L.,
Meng Andrew C.,
Braun Michael R.,
McGehee Michael D.,
Chidsey Christopher E. D.,
McIntyre Paul C.
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201800191
Subject(s) - materials science , perovskite (structure) , work function , non blocking i/o , photovoltaics , atomic layer deposition , layer (electronics) , energy conversion efficiency , perovskite solar cell , photovoltaic system , optoelectronics , alloy , solar cell , oxide , nanotechnology , chemical engineering , metallurgy , chemistry , catalysis , ecology , biochemistry , engineering , biology
The hole transport layer (HTL) is one of the key components in planar perovskite solar cells. This study reports a new kind of HTL fabricated using atomic layer deposition (ALD). By alloying TiO 2 with IrO x , it is demonstrated that TiO 2 , a well‐known electron‐selective contact and electron transport layer in photovoltaic devices, can behave as an HTL with an appropriately high work function. Perovskite Cs 0.17 FA 0.83 Pb(I 0.83 Br 0.17 ) 3 solar cells including this new hole transport material achieve a power conversion efficiency of 15.8% under AM 1.5G simulated solar irradiation compared to a 14.3% efficiency for otherwise‐identical devices incorporating a more standard NiO HTL layer. These results suggest the promise of transition metal oxide alloys synthesized by ALD as hole contact materials for optoelectronic devices, including advanced photovoltaics.