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Direct Growth of MoS 2 and WS 2 Layers by Metal Organic Chemical Vapor Deposition
Author(s) -
Cwik Stefan,
Mitoraj Dariusz,
Mendoza Reyes Oliver,
Rogalla Detlef,
Peeters Daniel,
Kim Jiyeon,
Schütz Hanno Maria,
Bock Claudia,
Beranek Radim,
Devi Anjana
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201800140
Subject(s) - chemical vapor deposition , metalorganic vapour phase epitaxy , materials science , x ray photoelectron spectroscopy , raman spectroscopy , sulfur , molybdenum , tungsten , transition metal , combustion chemical vapor deposition , chemical engineering , nanotechnology , inorganic chemistry , thin film , epitaxy , chemistry , catalysis , layer (electronics) , metallurgy , carbon film , organic chemistry , optics , physics , engineering
For the growth of 2D transition metal dichalcogenides, such as molybdenum (MoS 2 ) and tungsten disulfides (WS 2 ), metalorganic chemical vapor deposition (MOCVD) routes are favorable due to their superior scalability, the possibility to tune the processing temperatures by a proper choice of reactants thus avoiding the need for a postdeposition treatment. Herein, the first example of a promising MOCVD route for the direct fabrication of MoS 2 and WS 2 layers under moderate process conditions is reported. This straightforward route is successfully realized by the combination of metalorganic precursors of Mo or W bearing the amidinato ligand with just elemental sulfur. The formation of stoichiometric hexagonal 2H‐MoS 2 and 2H‐WS 2 is demonstrated which is confirmed by Raman, X‐ray diffraction, and X‐ray photoelectron spectroscopy studies. The deposited layers are evaluated for their electrocatalytic activity in hydrogen evolution reaction as a proof of principle for application in water splitting devices.