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Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017)
Author(s) -
Dyck Ondrej,
Leonard Donovan N.,
Edge Lisa F.,
Jackson Clayton A.,
Pritchett Emily J.,
Deelman Peter W.,
Poplawsky Jonathan D.
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201770110
Subject(s) - atom probe , materials science , atom (system on chip) , tomography , scanning transmission electron microscopy , transmission electron microscopy , evaporation , electron tomography , silicon , field (mathematics) , analytical chemistry (journal) , optics , atomic physics , molecular physics , optoelectronics , nanotechnology , physics , chemistry , mathematics , chromatography , computer science , pure mathematics , thermodynamics , embedded system
Jonathan D. Poplawsky and co‐workers demonstrate a scanning transmission electron microscopy (STEM) verified method for atom probe tomography (APT) to accurately quantify Si/SiGe interfaces with 1Å precision in article number 1700622 . The image depicts the atom probe field evaporation process with Si and Ge atoms field evaporating and being detected from a needle shaped SiGe specimen. The APT results are compared to STEM data after the post‐reconstruction process, and the results are in good agreement.