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Hot Wire ALD: Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry (Adv. Mater. Interfaces 18/2017)
Author(s) -
Kovalgin Alexey Y.,
Yang Mengdi,
Banerjee Sourish,
Apaydin Ramazan O.,
Aarnink Antonius A. I.,
Kinge Sachin,
Wolters Rob A. M.
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201770095
Subject(s) - atomic layer deposition , materials science , tungsten , in situ , substrate (aquarium) , ellipsometry , layer (electronics) , nanotechnology , chemical engineering , thin film , metallurgy , chemistry , organic chemistry , oceanography , geology , engineering
The cover depicts a reactor utilized for hot‐wire assisted atomic layer deposition (Hot Wire ALD), enabling formation of reactive species (radicals) at low substrate temperatures, without the use of plasma. A tungsten filament heated up to1300–2000 °C is installed on the side. The reactor is equipped with an in situ spectroscopic ellipsometer, as reported by Alexey Y. Kovalgin and co‐workers in article number 1700058 .