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Light‐Emitting Diodes: Graphene Oxide Inserted Poly( N ‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes (Adv. Mater. Interfaces 15/2017)
Author(s) -
Park Young Ran,
Choi Kyoung Soon,
Kim Jong Chan,
Seo Young Soo,
Kim Soo Young,
Kim YongJin,
Choi Won Kook,
Jeong Hu Young,
Yang Woo Seok,
Hong Young Joon
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201770077
Subject(s) - materials science , graphene , heterojunction , optoelectronics , oxide , diode , light emitting diode , quantum dot , vanadium oxide , nanotechnology , metallurgy
In article number 1700476 , Young Joon Hong and co‐workers demonstrate the ability of graphene oxide interlayer to improve hole conduction capability for QD‐LEDs by Hong and co‐workers. Graphene oxide interlayer between PVK and V 2 O 5− x shifted energy level of PVK downward by dehybridizing the PVK/V 2 O 5− x heterointerface. This work opens the way of engineering the electrical properties of organic/inorganic heterojunction by inserting ultrathin two‐dimensional materials.