Premium
Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO 4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)
Author(s) -
Bu Yuyu,
Tian Jing,
Chen Zhiwei,
Zhang Qiang,
Li Weibing,
Tian FengHui,
Ao JinPing
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201770049
Subject(s) - materials science , facet (psychology) , doping , oxygen , oxygen evolution , electrochemistry , metal , nanotechnology , optoelectronics , electrode , metallurgy , psychology , social psychology , chemistry , personality , big five personality traits , organic chemistry
Oxygen vacancy on the surface of BiVO 4 photoanode is a double‐edged sword for the photoelectrochemical performance. It can increase the free charge density of BiVO 4 , but inducing the recombiation of free photogenerated carriers. In article number 1601235 , Weibin Li, FengHui Tian, Jin‐Ping Ao, and co‐workers demostrate that quasi‐oxygen vacancy forming on the surface of the BiVO 4 active facet is the true reason to improve the photoelectrochemical performance of it.