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Photoluminescence Characteristics of Multilayer HfSe 2 Synthesized on Sapphire Using Ion Implantation
Author(s) -
Tsai HsuSheng,
Liou JheWei,
Setiyawati Icuk,
Chiang KuanRong,
Chen ChiaWei,
Chi ChiChong,
Chueh YuLun,
Ouyang Hao,
Tang YuHui,
Woon WeiYen,
Liang JenqHorng
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201701619
Subject(s) - materials science , photoluminescence , raman spectroscopy , x ray photoelectron spectroscopy , sapphire , annealing (glass) , octahedron , ion , transmission electron microscopy , spectroscopy , ion implantation , optoelectronics , analytical chemistry (journal) , crystal structure , optics , nanotechnology , crystallography , nuclear magnetic resonance , chemistry , laser , metallurgy , physics , organic chemistry , quantum mechanics , chromatography
Abstract The multilayer HfSe 2 on sapphire is first fabricated by the ion beam‐assisted process combining ion implantation with the post annealing. The A 1g mode of HfSe 2 is shown in the Raman spectrum, the X‐ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe 2 . The six‐layered (6L) octahedral HfSe 2 (1T‐HfSe 2 ), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.