Premium
Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half‐Cycles
Author(s) -
Wiegand Christoph W.,
Zierold Robert,
Faust René,
Pohl Darius,
Thomas Andy,
Rellinghaus Bernd,
Nielsch Kornelius
Publication year - 2018
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201701155
Subject(s) - quartz crystal microbalance , chalcogenide , materials science , substrate (aquarium) , semiconductor , atomic layer deposition , tellurium , selenium , chemical vapor deposition , layer (electronics) , chemical engineering , nanotechnology , analytical chemistry (journal) , adsorption , chemistry , optoelectronics , organic chemistry , oceanography , engineering , metallurgy , geology
The behaviors of tellurium and selenium atomic layer deposition vapor precursors, namely, Te(SiEt 3 ) 2 and Se(SiEt 3 ) 2 , exposed to different V–VI semiconductor surfaces are reported. The interactions of the precursors with the substrates are monitored in situ with a quartz crystal microbalance (QCM) setup. Specifically, both the utilized metal–organic precursors interact with chalcogenide surfaces but differ in their reaction behaviors. Indeed, exchanged Te diffuses into the selenium‐containing substrate, whereas Se only exchanges with the top surface of the substrate. Transmission electron micrsocopy (TEM) and energy‐dispersive X‐ray spectroscopy (EDX/EDXS) analysis of the topological insulating nanowires reveals the single precursor interactions, which support the QCM data analysis, and provides insight into the morphological and crystalline structures of the altered substrates.