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Low‐Temperature Mullite Formation in Ternary Oxide Coatings Deposited by ALD for High‐Temperature Applications
Author(s) -
Furlan Kaline P.,
Krekeler Tobias,
Ritter Martin,
Blick Robert,
Schneider Gerold A.,
Nielsch Kornelius,
Zierold Robert,
Janßen Rolf
Publication year - 2017
Publication title -
advanced materials interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.671
H-Index - 65
ISSN - 2196-7350
DOI - 10.1002/admi.201700912
Subject(s) - materials science , mullite , atomic layer deposition , ternary operation , chemical engineering , amorphous solid , sol gel , oxide , wafer , thin film , silicon , nanotechnology , composite material , crystallography , optoelectronics , ceramic , metallurgy , chemistry , computer science , engineering , programming language
Atomic layer deposition (ALD) process presents thickness control in an Ångstrom scale due to its inherent surface self‐limited reactions. In this work, an ALD super cycle approach, where a superposition of nanolaminates of SiO 2 and Al 2 O 3 is generated by cycling the precursors APTES–H 2 O–O 3 and TMA–H 2 O, is used to deposit thin films with varying ratio of Al 2 O 3 :SiO 2 into silicon wafers and into inverse photonic crystals. The resulting ternary oxide films deposited at low temperature (150 °C) are amorphous. However, conversion to mullite occurs at 1000 °C, way below the conversion temperatures found into powder processing or diphasic sol–gel routes (type II) and comparable to monophasic sol–gel synthesis. By means of such a mullite coating, the structural stability of an Al 2 O 3 inverse photonic crystal is increased up to 1400 °C.